Two-step thermal quenching of photoluminescence in Zn-doped GaN
نویسندگان
چکیده
منابع مشابه
hermal quenching of photoluminescence from Er-doped GaN thin films
The green (537 and 558 nm) and near infrared (1.54 mm) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity. Thermal quenching measurements showed that the 31 4 2 4 integrated green Er PL intensity ( S / H → I ) remained nearly constant up to 150 K, but decreased at higher temperatures 3 / 2 11 /...
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The photoluminescence (PL) properties of the Cu:Zn-In-S core quantum dots (QDs) and core-shell QDs were systematically investigated by using steady-state and time-resolved PL spectra at temperatures ranging from 80 to 400 K. The effects of the shell structure and the host bandgap on the thermal stability of Cu dopant emissions were studied by measuring the change in the PL intensity and the lif...
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Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10 18 cm -3 to well above 10 19 cm -3 . The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV ...
متن کاملPHOTOLUMINESCENCE STUDY OF GaN
Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Αl 2 O 3 (100), (111)Si, and (00.1)6H—SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant-related emissions from doped samples were observed. Deep-level yellow emissioii centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with opt...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2012
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.85.245203